inverter
GaN
Also known as: Gallium Nitride
Wide-bandgap semiconductor used in solar inverters and power electronics, offering higher switching frequencies than silicon or SiC.
Gallium Nitride (GaN) is a wide-bandgap semiconductor enabling higher switching frequencies (MHz range vs kHz for silicon IGBT) and smaller passive components in power electronics. GaN penetrated residential microinverters and EV chargers first; utility inverters remained dominated by SiC and silicon IGBT through 2026. The trade-off: GaN delivers higher efficiency and smaller form factors at higher per-watt component cost.
Related terms
- SiC — Wide-bandgap semiconductor enabling higher-efficiency, higher-power-density inve…
- Microinverter — Small inverter (typically 250–400 W) installed at each individual solar module, …